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Volumn 85, Issue 17, 2004, Pages 3743-3745

Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HETEROJUNCTIONS; IMAGE ANALYSIS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 9744272461     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810643     Document Type: Article
Times cited : (15)

References (14)
  • 7
    • 77957695467 scopus 로고    scopus 로고
    • A. Rosenauer and D. Gerthsen, Adv. Imaging Electron Phys. 107, 121 (1999); A. Rosenauer, Transmission Electron Microscopy of Semiconductor Nanostructures - An Analysis of Composition and Strain, Springer Tracts in Modern Physics Vol. 182 (Springer, Heidelberg, 2003).
    • (1999) Adv. Imaging Electron Phys. , vol.107 , pp. 121
    • Rosenauer, A.1    Gerthsen, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.