SCOPUS 정보 검색 플랫폼

Volumn 515, Issue 10, 2007, Pages 4344-4347

Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

(8) Djie, H S a Wang, D N a Ooi, B S a Hwang, J C M a Fang, X M b Wu, Y b Fastenau, J M b Liu, W K b

a Lehigh University (United States)

b IQE INC (United States)

Author keywords

Quantum dot; Rapid thermal annealing; Transmission electron microscopy

Indexed keywords

METALLIC SUPERLATTICES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

BANDGAP; CARRIER CONFINEMENT; DOT INTERDIFFUSION; EMISSION WAVELENGTH TRIMMING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33847037535 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2006.07.097 Document Type: Article

Times cited : (9)

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