SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 17, Issue 2, 2002, Pages 145-149

Effects of thermal annealing on the optical properties of InGaNAs/GaAs multiple quantum wells

(5) Pomarico, A a Lomascolo, M a Cingolani, R a Egorov, A Yu b,c Riechert, H b

a NATIONAL NANOTECHNOLOGY LABORATORY (Italy)

b INFINEON TECHNOLOGIES AG (Germany)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPY; TEMPERATURE;

ALLOY POTENTIAL FLUCTUATIONS; DENSITY OF THE DEFECTS; FREE CARRIER RECOMBINATIONS; LOW TEMPERATURE PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE SPECTRA; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036471763 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/2/310 Document Type: Article

Times cited : (19)

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