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Journal of the Korean Physical Society

Volumn 49, Issue 3, 2006, Pages 1188-1191

Fabrication and electrical characterization of a floating gate capacitor with In2O3 nano-particles

(3) Lee, Dong Uk a Kim, Jae Hoon a Kim, Eun Kyu a

a Hanyang University (South Korea)

Author keywords

In2O3; Nano floating gate memory; Nano particles; Polymertic matrix

Indexed keywords

EID: 33749827790 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (13)

References (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.