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Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices

(3) Chang, M a Hwang, H a Jeon, S b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-BENDING EFFECTS; BANDBENDING; CHARGE LOSS; CHARGE TRAP FLASH MEMORIES; DE-TRAPPING; GATE VOLTAGES; NEGATIVE SHIFT; NEGATIVE V; RETENTION CHARACTERISTICS;

ALUMINUM; FLASH MEMORY;

SILICON COMPOUNDS;

EID: 76449105842 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3295697 Document Type: Article

Times cited : (4)

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