Demonstration of p-type 3CSiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °c

Journal of Crystal Growth

Volumn 329, Issue 1, 2011, Pages 67-70

  Wang, Li ^a   Dimitrijev, Sima ^a   Han, Jisheng ^a   Tanner, Philip ^a   Iacopi, Alan ^a   Hold, Leonie ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

A1. Crystal morphology; A1. X ray diffraction; A3. Chemical vapor deposition processes; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

A3. CHEMICAL VAPOR DEPOSITION PROCESSES; ATOMIC CONCENTRATION; B1. SILICON CARBIDE; B2. SEMICONDUCTING MATERIALS; CRYSTAL MORPHOLOGIES; DOPING MECHANISM; DOPING METHODS; HIGH TEMPERATURE; LARGE-DIAMETER; P-TYPE; REACTOR PRESSURES; SI WAFER; SI(1 0 0); SI-BASED DEVICES; SIC FILMS; SINGLE-CRYSTALLINE; TRIMETHYLALUMINIUM;

ALUMINUM; ATOMS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SILICON; SILICON CARBIDE; SILICON WAFERS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960846053     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.06.041     Document Type: Article

References (24)

1. M. Portail, M. Zielinski, T. Chasssagne, S. Roy, and M. Nemoz J. Appl. Phys. 105 2009 083505
2. M.A. Capano, B.C. Kim, A.R. Smith, E.P. Kvam, S. Tsoi, and A.K. Ramdas J. Appl. Phys. 100 2006 083514
3. A. Severino, C. Bongiorno, N. Piluso, M. Italia, M. Camarda, M. Mauceri, G. Condorelli, M.A. Di Stefano, B. Cafra, A. La Magna, and F. La Via Thin Solid Films 518 2010 S165
4. W. Chen, W. Wang, J. Liu, C. Chen, J. Hwang, C. Huang, and L. Chang J. Electrochem. Soc. 157 2010 H377
5. H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, and M. Abe Microelectron. Eng. 83 2006 185
6. J. Yun, T. Takahashi, Y. Ishida, and H. Okumura J. Cryst. Growth 291 2006 140
7. Y. Ishida, T. Takahashi, H. Okumura, K. Arai, and S. Yoshida Chem. Vapor Deposition 12 2006 495
8. G. Wagner, M. Schmidbauer, K. Irmscher, P. Tanner, and R. Fornari Mater. Sci. Forum 615617 2009 165
9. M. Yamanaka, H. Daimon, E. Sakuma, S. Misawa, and S. Yoshida J. Appl. Phys. 61 1987 599
10. L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, P. Tanner, and H.B. Harrison Thin Solid Films 519 2011 6443 10.1016/j.tsf.2011.04.224
11. T. Yoshinobu, M. Nakayama, H. Shiomi, T. Fuyuki, and H. Matsunami J. Cryst. Growth 99 1990 520
12. T. Fuyuki, T. Yoshinobu, and H. Matsunami Thin Solid Films 225 1993 225
13. T. Yoshinobu, H. Mitsui, Y. Tarui, T. Fuyuki, and H. Matsunami J. Appl. Phys. 72 1992 2006
14. K. Kim, S. Choi, and K.L. Wang Thin Solid Films 225 1993 235
15. T. Hatayama, Y. Tarui, T. Fuyuki, and H. Matsunami J. Cryst. Growth 150 1995 934
16. H. Nagasawa, and Y. Yamaguchi Thin Solid Films 225 1993 230
17. H. Nagasawa, and K. Yagi Phys. Status Solidi B 202 1997 335
18. P. Deák, B. Aradi, A. Gali, and U. Gerstmann Phys. Status Solidi B 235 2003 139
19. A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel'son, G.A. Oganesyan, A.S. Tregubova, and R. Yakimova Semicond. Sci. Technol. 23 2008 075004
20. H. Matsuura, M. Komeda, S. Kagamihara, H. Iwata, and R. Ishihara J. Appl. Phys. 96 2004 2708
21. M. Cooke Semicond. Today 2 2007 54
22. D.J. Larkin Phys. Status Solidi B 202 1997 305
23. I.P. Batra Phys. Rev. Lett. 63 1989 1704
24. T.R. Gow, R. Lin, L.A. Cadwell, F. Lee, A.L. Backman, and R.I. Masel Chem. Mater. 1 1989 406