"Some like it shallower" - p-type doping in SiC

Physica Status Solidi (B) Basic Research

Volumn 235, Issue 1, 2003, Pages 139-145

  Deák, Peter ^a   Aradi, Bálint ^a   Gali, Adam ^a   Gerstmann, Uwe ^b  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BORON; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; CRYSTAL LATTICES; EPITAXIAL GROWTH; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING;

BAND GAP SEMICONDUCTORS; HOMOEPITAXIAL LAYERS; LOCAL DENSITY APPROXIMATION (LDA);

SILICON CARBIDE;

EID: 0037276890     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200301522     Document Type: Conference Paper

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