Crystal quality of 3C-SiC influenced by the diffusion step in the modified four-step method

Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

  Chen, Wei Yu ^a   Wang, Wei Lin ^b   Liu, Jui Min ^a   Chen, Chien Cheng ^a   Hwang, Jenn Chang ^a   Huang, Chih Fang ^a   Chang, Li ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENT; BONDING CHARACTERISTICS; C 1S CORE LEVEL; C-C BONDS; CARBURIZED LAYER; CRYSTAL QUALITIES; FORMATION MECHANISM; GROWTH STEPS; HIGH QUALITY; LATTICE IMAGES; SI(1 0 0); SI-C BOND; SIC BUFFER LAYERS; STEP METHOD; TRANSMISSION ELECTRON MICROSCOPE; TWIN BOUNDARIES; VOID-FREE;

BUFFER LAYERS; DIFFUSION; ELECTRON MICROSCOPES; SILICON; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 76349124701     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3294700     Document Type: Article

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