Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Capano, M A ^a   Kim, B C ^a   Smith, A R ^a   Kvam, E P ^a   Tsoi, S ^a   Ramdas, A K ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYER THICKNESS; HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); PEAK WIDTH; STRUCTURAL DEFECT DENSITIES;

PHASE INTERFACES; RAMAN SPECTROSCOPY; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 33750516935     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357842     Document Type: Article

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