P-type doping of epitaxial 3C-SiC layers on silicon (001)

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 165-168

  Wagner, G ^a   Schmidbauer, M ^a   Irmscher, K ^a   Tanner, P ^b   Fornari, R ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

3C SiC; Heteroepitaxy; Hot wall CVD; P type doping; TMA

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; FULL WIDTH AT HALF MAXIMUM; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

3C-SIC; CHEMICAL VAPOUR DEPOSITION; ELECTRICAL RESISTIVITY METHODS; HIGH-RESOLUTION X-RAY DIFFRACTION; HOT WALL; P-TYPE DOPING; SECONDARY ION MASS SPECTROSCOPIES (SIMS); SINGLE-CRYSTALLINE 3C-SIC;

EPITAXIAL GROWTH;

EID: 77955452136     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.165     Document Type: Conference Paper

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