Highly doped p-type 3C-SiC on 6H-SiC substrates

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Lebedev, A A ^a   Abramov, P L ^a   Bogdanova, E V ^a   Lebedev, S P ^a   Nel'son, D K ^a   Oganesyan, G A ^a   Tregubova, A S ^a   Yakimova, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

ACCEPTOR CENTERS; CARRIER (CO); CONCENTRATION (COMPOSITION); CRYSTAL PERFECTION; IN-VACUUM; PHOTOLUMINESCENCE (PL) SPECTRUM; SIC SUBSTRATES; SUBLIMATION EPITAXY; TEMPERATURE DEPENDENCES; TWO TYPES;

SILICON CARBIDE;

EID: 47749154066     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075004     Document Type: Article

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