Long-term environmental stability of residual stress of SiNx, SiOx, and Ge thin films prepared at low temperatures

Materials Science and Engineering: B

Volumn 163, Issue 1, 2009, Pages 26-30

  Martyniuk, M ^a   Musca, C A ^a   Dell, J M ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

MEMS; Silicon nitride; Stress; Thin films

Indexed keywords

ATMOSPHERIC TEMPERATURE; FILM PREPARATION; GERMANIUM; MEMS; NITROGEN; OPTICAL DATA PROCESSING; PLASMA CVD; PLASMA STABILITY; SILICON NITRIDE; SUBSTRATES;

DRY NITROGEN; ENVIRONMENTAL STABILITY; GE THIN FILMS; IN-VACUUM; LOWS-TEMPERATURES; MEMS (MICROELECTROMECHANICAL SYSTEM); OPTICAL MEASUREMENT; SIO X; STRESS VALUES; THIN-FILMS;

THIN FILMS;

EID: 67649425764     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.04.019     Document Type: Article

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