-
1
-
-
67349274376
-
-
10.1016/j.solmat.2008.10.018
-
F.-J. Haug, T. Söderström, M. Python, V. Terrazzoni-Daudrix, X. Niquille, and C. Ballif, Sol. Energy Mater. Sol. Cells 93, 884 (2009). 10.1016/j.solmat.2008.10.018
-
(2009)
Sol. Energy Mater. Sol. Cells
, vol.93
, pp. 884
-
-
Haug, F.-J.1
Söderström, T.2
Python, M.3
Terrazzoni-Daudrix, V.4
Niquille, X.5
Ballif, C.6
-
2
-
-
77955419752
-
-
10.1016/j.solmat.2010.01.013
-
J. K. Rath, M. Brinza, Y. Liu, A. Borreman, and R. E. I. Schropp, Sol. Energy Mater. Sol. Cells 94, 1534 (2010). 10.1016/j.solmat.2010.01.013
-
(2010)
Sol. Energy Mater. Sol. Cells
, vol.94
, pp. 1534
-
-
Rath, J.K.1
Brinza, M.2
Liu, Y.3
Borreman, A.4
Schropp, R.E.I.5
-
3
-
-
0345772971
-
Low-temperature deposition of amorphous silicon solar cells
-
DOI 10.1016/S0927-0248(00)00249-X, PII S092702480000249X
-
C. Koch, M. Ito, and M. Schubert, Sol. Energy Mater. Sol. Cells 68, 227 (2001). 10.1016/S0927-0248(00)00249-X (Pubitemid 33649564)
-
(2001)
Solar Energy Materials and Solar Cells
, vol.68
, Issue.2
, pp. 227-236
-
-
Koch, C.1
Ito, M.2
Schubert, M.3
-
5
-
-
23644455993
-
Low-temperature materials and thin film transistors for flexible electronics
-
DOI 10.1109/JPROC.2005.851497
-
A. Sazonov, D. Striakhilev, C.-H. Lee, and A. Nathan, Proc. IEEE 93, 1420 (2005). 10.1109/JPROC.2005.851497 (Pubitemid 41130258)
-
(2005)
Proceedings of the IEEE
, vol.93
, Issue.8
, pp. 1420-1428
-
-
Sazonov, A.1
Striakhilev, D.2
Lee, C.-H.O.3
Nathan, A.4
-
6
-
-
0038107119
-
-
10.1016/S0927-0248(02)00448-8
-
A. V. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and U. Graf, Sol. Energy Mater. Sol. Cells 78, 469 (2003). 10.1016/S0927- 0248(02)00448-8
-
(2003)
Sol. Energy Mater. Sol. Cells
, vol.78
, pp. 469
-
-
Shah, A.V.1
Meier, J.2
Vallat-Sauvain, E.3
Wyrsch, N.4
Kroll, U.5
Droz, C.6
Graf, U.7
-
7
-
-
17944383582
-
-
10.1016/j.tsf.2003.11.014
-
J. Meier, J. Spitznagel, C. Bucher, S. Faÿ, T. Moriarty, and A. Shah, Thin Solid Films 451-452, 518 (2004). 10.1016/j.tsf.2003.11.014
-
(2004)
Thin Solid Films
, vol.451-452
, pp. 518
-
-
Meier, J.1
Spitznagel, J.2
Bucher, C.3
Faÿ, S.4
Moriarty, T.5
Shah, A.6
-
10
-
-
40149087199
-
Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition
-
DOI 10.1063/1.2885158
-
J. Li, J. Wang, M. Yin, P. Gao, D. He, Q. Chen, Y. Li, and H. Shirai, J. Appl. Phys. 103, 043505 (2008). 10.1063/1.2885158 (Pubitemid 351327502)
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.4
, pp. 043505
-
-
Li, J.1
Wang, J.2
Yin, M.3
Gao, P.4
He, D.5
Chen, Q.6
Li, Y.7
Shirai, H.8
-
11
-
-
2642527884
-
-
10.1149/1.1718258
-
J.-H. Wu, J.-M. Shieh, B.-T. Dai, and Y. C. S. Wu, Electrochem. Solid-State Lett. 7, G128 (2004). 10.1149/1.1718258
-
(2004)
Electrochem. Solid-State Lett.
, vol.7
, pp. 128
-
-
Wu, J.-H.1
Shieh, J.-M.2
Dai, B.-T.3
Wu, Y.C.S.4
-
13
-
-
0032608065
-
-
10.1063/1.123693
-
S. Guha, J. Yang, D. L. Williamson, Y. Lubianiker, J. D. Cohen, and A. H. Mahan, Appl. Phys. Lett. 74, 1860 (1999). 10.1063/1.123693
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1860
-
-
Guha, S.1
Yang, J.2
Williamson, D.L.3
Lubianiker, Y.4
Cohen, J.D.5
Mahan, A.H.6
-
15
-
-
0036531038
-
Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD
-
DOI 10.1016/S0022-3093(01)01098-5, PII S0022309301010985, Suppl. 2
-
B. Stannowski, R. E. I. Schropp, R. B. Wehrspohn, and M. J. Powell, J. Non-Cryst. Solids 299-302, 1340 (2002). 10.1016/S0022-3093(01)01098-5 (Pubitemid 34405868)
-
(2002)
Journal of Non-Crystalline Solids
, vol.299-302
, Issue.PART 2
, pp. 1340-1344
-
-
Stannowski, B.1
Schropp, R.E.I.2
Wehrspohn, R.B.3
Powell, M.J.4
-
16
-
-
79956053162
-
Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma
-
DOI 10.1063/1.1500794
-
J.-M. Shieh, K.-C. Tsai, and B.-T. Dai. Appl. Phys. Lett. 81, 1294 (2002). 10.1063/1.1500794 (Pubitemid 34963834)
-
(2002)
Applied Physics Letters
, vol.81
, Issue.7
, pp. 1294
-
-
Shieh, J.-M.1
Tsai, K.-C.2
Dai, B.-T.3
-
18
-
-
0000182211
-
-
10.1063/1.372226
-
J. Robertson, J. Appl. Phys. 87, 2608 (2000). 10.1063/1.372226
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 2608
-
-
Robertson, J.1
-
20
-
-
0032613495
-
-
10.1103/PhysRevLett.82.2512
-
R. Biswas and Y.-P. Li, Phys. Rev. Lett. 82, 2512 (1999). 10.1103/PhysRevLett.82.2512
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 2512
-
-
Biswas, R.1
Li, Y.-P.2
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