Reactive ion etching process of transition-metal oxide for resistance random access memory device

Japanese Journal of Applied Physics

Volumn 47, Issue 8 PART 3, 2008, Pages 6931-6933

  Takano, Fumiyoshi ^a   Shima, Hisashi ^a   Muramatsu, Hidenobu ^a   Kokaze, Yutaka ^b   Nishioka, Yutaka ^b   Suu, Koukou ^b   Kishi, Hirofumi ^c   Arboleda Jr , Nelson Buntimil ^c   David, Melanie ^c   Roman, Tanglaw ^c   Kasai, Hideaki ^c   Akinaga, Hiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ULVAC INC   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

CHF3 based discharge; Inductively coupled plasma (ICP); Reactive ion etching (RIE); Resistance random access memory (RRAM); Transition metal oxide

Indexed keywords

COBALT COMPOUNDS; COPPER OXIDES; DATA STORAGE EQUIPMENT; DISCHARGE (FLUID MECHANICS); ELECTRIC DISCHARGES; ETCHING; INDUCTIVELY COUPLED PLASMA; IONS; METALLIC COMPOUNDS; PHOTORESISTS; PLASMAS; RANDOM ACCESS STORAGE; RANDOM PROCESSES; TABLE LOOKUP; TRANSITION METALS;

CHF3-BASED DISCHARGE; DEVICE FABRICATIONS; KEY MATERIALS; METAL OXIDES; PRESENT DEVICES; REACTIVE ION ETCHING (RIE); REACTIVE IONS; RESISTANCE RANDOM ACCESS MEMORIES; RESISTANCE RANDOM ACCESS MEMORY (RRAM); SEMI-CONDUCTORS; TRANSITION-METAL OXIDE; TRILAYERS;

REACTIVE ION ETCHING;

EID: 55149102809     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6931     Document Type: Article

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