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Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 10, 2008, Pages 1976-1979

First principles based investigations of materials for resistive RAM

(7) Kishi, Hirofumi a Kishi, Tomoya a Diño, Wilson Agerico a,b Minamitani, Emi a Akinaga, Hiro c Nakanishi, Hiroshi a Kasai, Hideaki a

a OSAKA UNIVERSITY (Japan)

b DE LA SALLE UNIVERSITY (Philippines)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

CoO NiO CoO; First principles calculations; ReRAM; Transition metal oxides

Indexed keywords

MAGNETIC MOMENTS; METALLIC COMPOUNDS; METALS; RANDOM ACCESS STORAGE; TRANSITION METALS;

ATOMIC LAYERS; COO/NIO/COO; DEVICE STRUCTURES; FIRST PRINCIPLES; FIRST PRINCIPLES CALCULATIONS; METAL OXIDE LAYERS; RERAM; RESISTANCE CHANGES; SPEED RESPONSES;

TRANSITION METAL COMPOUNDS;

EID: 57649245585 PISSN: 15461955 EISSN: None Source Type: Journal
DOI: 10.1166/jctn.2008.1003 Document Type: Article

Times cited : (6)

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