Ultra-thin Ta2O5/SiO2 gate insulator with TiN gate technology for 0.1 μm MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 135-136

  Momiyama, Youichi ^a   Minakata, Hiroshi ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INSULATING MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; ULTRATHIN FILMS;

DRIVE CURRENTS; GATE INSULATORS; POLYSILICON;

MOSFET DEVICES;

EID: 0030685281     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)