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Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN

(9) Wu, Z H a,b Tanikawa, T b Murase, T b Fang, Y Y a Chen, C Q a Honda, Y b Yamaguchi, M b Amano, H b Sawaki, N c

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b NAGOYA UNIVERSITY (Japan)

c AICHI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL STACKING FAULTS; GAN TEMPLATE; IN-PLANE; LUMINESCENCE EFFICIENCIES; MULTIPLE QUANTUM WELLS; RECIPROCAL SPACE MAPPING; RELAXATION PHENOMENA; SELECTIVE AREA GROWTH TECHNIQUES; SEMIPOLAR; SILICON SUBSTRATES;

GALLIUM ALLOYS; GALLIUM NITRIDE; STACKING FAULTS; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79951496441 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549561 Document Type: Article

Times cited : (35)

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