Effect of thermal annealing or plasma treatment on analog characteristics for high-k material capacitors

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5374-5379

  Kang, Tsung Kuei ^a   Chen, Chao Wen ^a   Lin, Cheng Li ^a   Wu, Wen Fa ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Capacitor; HfO2; Plasma treatment; Roughness; Thermal annealing; Voltage linearity property

Indexed keywords

ATOMIC PHYSICS; ATOMS; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; LINEARIZATION; OXYGEN; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TANNING; TANTALUM COMPOUNDS;

HFO2; PLASMA TREATMENT; ROUGHNESS; THERMAL ANNEALING; VOLTAGE LINEARITY PROPERTY;

ANNEALING;

EID: 55149115143     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5374     Document Type: Article

References (24)

1. S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S. Van Huylenhroeck, M. Da Rold, E. Rosseel, and P. Coppens: IEEE Proc. Bipolar/BiCMOS Circuits and Technology Meet., 2000, p. 106.
2. M. Racanelli, Z. Zhang, J. Zheng, A. Kar-Roy, P. Joshi, A. Kalburge, L. Nathawad, M. Todd, C. Ukah, C. Hu, C. Compton, K. Schuegraf, P. Ye, R. Dowlatshahi, G. Jolly, and P. Kempf: IEEE Proc. Bipolar/BiCMOS Circuits and Technology Meet., 1999, p. 125.
3. A. Kar-Roy, C. Hu, M. Racanelli, C. A. Compton, P. Kempf, G. Jolly, P. N. Sherman, J. Zheng, Z. Zhang, and A. Yin: Proc, Tnt. Interconnect Technology Conf., 1999, p. 245.
4. P. Zurcher, P. Alluri, P. Chu, P. Duvallet, C. Happ, R. Henderson, J. Mendonca, M. Kim, M. Petras, M. Raymond, T. Remmel, D. Roberts, B. Steimle, J. Stipanuk, S. Straub, T. Sparks, M. Tarabbia, H. Thibieroz, and M. Miller: IEDM Tech. Dig., 2000, p. 153.
5. M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, J. Heidenreich, G. Hueckel, O. Prigge, and K. Stein: IEDM Tech. Dig., 2000, p. 157.
6. J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh: IEEE Electron Device Lett, 22 (2001) 230.
7. Y. L. Tu, H. L. Lin, L. L. Chao, D. Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, and J. Sun: Symp. VLSI Technology Dig., 2003, p. 79.
8. S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D.-L. Kwong: VLSI Technology Dig., 2003, p. 77.
9. X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu: IEEE Electron Device Lett. 24 (2003) 63.
10. H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, M. B. Yu, X. Liu, and J. Winkler: IEEE Electron Device Lett. 24 (2003) 60.
11. T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, and D. Hisamoto: IEDM Tech. Dig., 2002, p. 940.
12. S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu: IEEE Electron Device Lett. 23 (2002) 185.
13. R. B. van Dover, R. M. Fleming, L. F. Schneemeyer, G. B. Alers, and D. J. Werder: IEDM Tech. Dig., 1998, p. 823.
14. T. Yoshitomi, Y. Ebuchi, H. Kimijima, T. Ohguro, E. Morifuji, H. S. Momose, K. Kasai, K. Ishimaru, F. Matsuoka, Y. Katsumata, M. Kinugawa, and H. Iwai: IEEE Proc, Bipolar/BiCMOS Circuits and Technology Meet., 1999, p. 133.
15. S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu: IEEE Electron Device Lett. 23 (2002) 185.
16. H. Hu, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi: IEEE Electron Device Lett. 23 (2002) 514.
17. H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev: J. Appl. Phys. 94 (2003) 1.
18. G. G. Stoney: Proc. R. Soc. London, Ser. A 82 (1909) 172.
19. W. J. Zhu, T. P. Ma, S. Zafar, and T. Tamagawa: IEEE Electron Device Lett, 23 (2002) 597.
20. T. Ino, Y. Kamimuta, M. Suzuki, M. Koyama, and A. Nishiyama: Jpn. J. Appl. Phys. 45 (2006) 2908.
21. Z. Chunxiang, H. Hang, Y. Xiongfei, S. J. Kim, A. Chin, M. F. Li, J. C. Byung, and D. L. Kwong: IEDM Tech. Dig., 2003, 36.5.1.
22. D. Brassard, L. Ouellet, and M. A. El Khakani: IEEE Electron Device Lett. 28 (2007) 261.
23. C. Wenger, R. Sorge, T. Schroeder, A. U. Mane, G. Lippert, G. Lupina, J. Dabrowski, P. Zaumseil, and H. J. Muessig: Microelectron, Eng. 80 (2005) 313.
24. Y. H. Jeong, J. B. Lim, S. Nahm, H. J. Sun, and H. J. Lee: IEEE Electron Device Lett. 28 (2007) 17.