The design of rewritable ultrahigh density scanning-probe phase-change memories

IEEE Transactions on Nanotechnology

Volumn 10, Issue 4, 2011, Pages 900-912

  Wright, C David ^a   Wang, Lei ^a   Shah, Purav ^a   Aziz, Mustafa M ^a   Varesi, Enrico ^b   Bez, Roberto ^b   Moroni, Maurizio ^b   Cazzaniga, Francesco ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b Numonyx   (Italy)

Author keywords

GeSbTe; phase change materials; phase change memories; phase change RAM; scanning probe memories

Indexed keywords

CARBON STRUCTURES; CONTINUOUS FILMS; DESIGN REQUIREMENTS; ELECTRICAL PROBES; GESBTE; HIGH DATA RATE; MATRIX; PATTERNED MEDIAS; PHASE CHANGE MEDIA; PHASE CHANGES; PHASE-CHANGE MEMORY TECHNOLOGIES; PHASE-CHANGE RAM; PROBE-BASED; REWRITABLE; SCANNING-PROBE MEMORIES; SYSTEMATIC DESIGNS; ULTRAHIGH DENSITY;

CRYSTALLINE MATERIALS; DESIGN; FILMS; PROBES; RANDOM ACCESS STORAGE; SCANNING;

PHASE CHANGE MEMORY;

EID: 79960280708     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2089638     Document Type: Article

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