Temperature dependence on the contact size of GeSbTe films for phase change memories

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 138-141

  Li, Yiming ^a   Yu, Shao Ming ^a   Hwang, Chih Hong ^a   Kuo, Yi Ting ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Geometry effects; GeSbTe material; Numerical simulation; Phase change memories; Temperature

Indexed keywords

ANTIMONY ALLOYS; DYNAMIC ANALYSIS; PHASE CHANGE MEMORY; THERMAL CONDUCTIVITY; THERMOANALYSIS; THREE DIMENSIONAL; TIME DOMAIN ANALYSIS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

GEOMETRY EFFECTS; GESBTE MATERIAL; NUMERICAL SIMULATION; PHASE CHANGE MEMORIES; TEMPERATURE;

SYSTEM THEORY;

EID: 50949107306     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0192-8     Document Type: Article

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