The future of phase-change semiconductor memory devices

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2748-2752

  Hudgens, Stephen J ^a  

^a Ovonyx Technologies Inc   (United States)

Author keywords

Amorphous semiconductors; Conductivity; Devices

Indexed keywords

AMORPHOUS SEMICONDUCTORS; FLASH MEMORY; MOBILE PHONES; PHASE CHANGE MEMORY;

MEMORY CELL DEVICE PHYSICS; NONVOLATILE MEMORY TECHNOLOGY;

SEMICONDUCTOR DEVICES;

EID: 42649139561     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.111     Document Type: Article

References (21)

1. Ovshinsky S.R. Phys. Rev. Lett. 21 (1968) 450
2. Feinlieb J., Iwasa S., Moss S.C., deNeufville J., and Ovshinsky S.R. J. Non-Cryst. Solids 8-10 (1971) 909
3. Yinug C.F. J. Int. Commer. Econ. July (2007) 1
4. Atwood G. IEEE Trans. Device Mater. Reliab. 4 (2004) 301
5. S. Lai, in: 4th European Workshop on Innovative Mass Storage Technologies, October 2004.
6. Wicker G. SPIE 3891 October (1999) 2
7. R. Bez, G. Atwood, in: IEEE NVSMW, 2006, p. 12.
8. Gleixner B., Pirovano A., Sarkur I., Ottogalli F., Tortorelli E., Tosi M., and Bez R. Proc. Int. Rel. Phys. Symp. (2007) 542
9. Yeung F., Ahn S.J., Hwang Y.N., Jeong C.W., Song Y.J., Lee S.Y., Lee S.H., Ryoo K.C., Park J.H., Shin J.M., Jeong W.C., Kim Y.T., Koh G.H., Jeong G.T., Jeong H.S., and Kim K. Jpn. J. Appl. Phys. 44 (2005) 2691
10. T. Lowrey, C. Dennison, S. Hudgens, W. Czubatyj, in: MRS Symp. Proc., vol. 803, 2003, p. HH2.1.1.
11. S. Raoux, C.T. Rettner, J.L. Jordan-Sweet, V.R. Deline, J.B. Phillipp, H.L. Lung, EPCOS06.
12. Gidon S., Lemonnier O., Roland B., Bichet O., Dressler C., and Samson Y. Appl. Phys. Lett. 85 (2004) 6392
13. Pirovano A., Lacaita A.L., Benvenuti A., Pellizzer F., Hudgens S., and Bez R. IEDM Tech. Digest (2003)
14. S.M. Sadeghipour, L. Pileggi, M. Asheghi, in: Proc. ITHERM06, 2006, p. 660.
15. Kim D.H., Merget F., Forst M., and Kurz H. J. Nanosci. Nanotechnol. 7 (2007) 298
16. U. Russo, A. Redaelli, D. Ielmini, A.L. Lacaita, in: Proc. ICMTD, 2007.
17. Jeong C.W., Ahn S.J., Hwang Y.N., Song Y.J., Oh J.H., Lee S.Y., Lee S.H., Ryoo K.C., Park J.H., Park J.H., Shin J.M., Yeung F.Y., Jeong W.C., Kim J.I., Koh G.H., Jeong G.T., Jeong H.S., and Kim K. Jpn. J. Appl. Phys. 43 (2006) 3233
18. K. Attenborough, M.H.R. Lankhorst, W.S.M.M. Ketelaars, R.A.M. Wolters, W. Baks, R. Delhougne, D.J. Gravesteijn, F.J. Jedma, J.T. van Hulle, D. Tio Castro, F.P. Widdershoven, M.A. in 't Zandt, in: EPCOS-05, 2005.
19. T.D. Happ, M. Breitwisch, A. Scrott, J.B. Philipp, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.H. Ho, S.H. Chen, E. Joseph, S. Zaidi, G.W. Burr, B. Yee, Y.C. Chen, S. Raoux, H.L. Lung, R. Bergmann, C. Lam, in: Symp. on VLSI Technology Digest of Papers, 2006.
20. J.I. Lee, H. Park, S.L. Cho, Y.L.Park, B.J. Bae, J.H. Park, H.G. An, J.S. Bae, D.H. Ahn, Y.T. Kim, H. Horii, S.A. Song, J.C. Shin, S.O.Park, H.S. Kim, U-In Chung, J.T. Moon, B.I. Ryu, in: Symp. on VLSI Technology Digest of Papers, 2007, p. 102.
21. Oh J.H., Park J.H., Lim Y.S., Lim H.S., Oh Y.T., Kim J.S., Shin J.M., Park J.H., Song Y.J., Ryoo K.C., Lim D.W., Park S.S., Kim J.I., Kim J.H., Yu J., Yeung F., Jeong C.W., Kong J.H., Kang D.H., Koh G.H., Jeong G.T., Jeong H.S., and Kim K. IEDM Tech. Digest (2006)