MOCVD of ZrO2 and HfO2 thin films from modified monomeric precursors

Chemical Vapor Deposition

Volumn 12, Issue 2-3, 2006, Pages 172-180

  Patil, Urmila ^a   Thomas, Reji ^b   Milanov, Andrian ^a   Bhakta, Raghunandan ^a   Ehrhart, Peter ^b   Waser, Rainer ^b   Becker, Ralf ^a   Becker, Hans Werner ^a   Winter, Manuela ^a   Merz, Klaus ^a   Fischer, Roland A ^a   Devi, Anjana ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

HfO2; High dielectrics; Metal organic precursors; MOCVD; ZrO2

Indexed keywords

ALCOHOLS; ATOMIC FORCE MICROSCOPY; DECOMPOSITION; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; THIN FILMS; VAPORIZATION; X RAY DIFFRACTION;

LIQUID DELIVERY SYSTEM; METALORGANIC PRECURSORS; MONOMERIC PRECURSORS;

ZIRCONIA;

EID: 33645570654     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200506394     Document Type: Article

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