Development of reactive-ion etching for ZnO-based nanodevices

IEEE Transactions on Nanotechnology

Volumn 10, Issue 4, 2011, Pages 839-843

  Lee, Kin Kiong ^a,b   Luo, Yi ^a   Lu, Xiaofeng ^c   Bao, Peng ^a   Song, Aimin M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c Nano EPrint Ltd   (United Kingdom)

Author keywords

Nanoimprint technique; reactive ion etching (RIE); semiconductor device fabrication; zinc oxide devices (ZnO)

Indexed keywords

ETCHING CONDITION; ETCHING MASKS; HIGH SELECTIVITY; HYDROGEN GAS; NANO-DEVICES; NANOFEATURES; NANOIMPRINT TECHNIQUES; PROCESS PARAMETERS; SELF-SWITCHING DIODES; SEMICONDUCTOR DEVICE FABRICATION; SYSTEMATIC STUDY; THIN LAYERS; ZNO;

ESTERS; IONS; METHANE; NANOIMPRINT LITHOGRAPHY; NANOSTRUCTURED MATERIALS; OPTIMIZATION; OXIDE FILMS; SEMICONDUCTOR SWITCHES; ZINC; ZINC OXIDE;

REACTIVE ION ETCHING;

EID: 79960205041     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2085013     Document Type: Article

References (21)

1. D. C. Reynolds, D. C. Look, and B. Jogai, "Optically pumped ultraviolet lasing from ZnO," Solid State Commun, vol. 99, no. 12, pp. 873-875, 1996. (Pubitemid 126364274)
2. K.Vanheusden,W. L.Warrren, C. H. Seager,D. R. Tallant, and J.A. Voigt, "Mechanisms behind green photoluminescence in ZnO phosphor powders," J. Appl. Phys., vol. 79, no. 10, pp. 7983-7990, 1996. (Pubitemid 126626177)
3. D. C. Look, "Recent advances in ZnO materials and devices," Mater. Sci. Eng. B, vol. 80, no. 1-3, pp. 383-387, 2001. (Pubitemid 32331341)
4. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor," Science, vol. 300, no. 5623, pp. 1269-1272, 2003. (Pubitemid 36621429)
5. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, 2003.
6. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, 2003.
7. L. Zhang,H.Zhang,Y.Bai, J.W. Ma, J. Cao, X. Y. Jiang, and Z. L. Zhang, "Enhanced performances of ZnO-TFT by improving surface properties of channel layer," Solid State Commun, vol. 146, no. 9-10, pp. 387-390, 2008.
8. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO," Nat. Mater., vol. 4, no. 1, pp. 42-46, 2005.
9. J.M. Lee, K. K. Kim, C. K. Hyun, H. Tampo, and S.Niki, "Microstructural evolution of ZnO by wet-etching using acidic solutions," J. Nanosci. Nanotechnol., vol. 6, no. 11, pp. 3364-3368, 2006. (Pubitemid 46010089)
10. J. M. Lee, K. M. Chang, K. K. Kim, W. K. Choi, and S. J. Park, "Dry etching of ZnO using an inductively coupled plasma," J. Electrochem. Soc., vol. 148, no. 1, pp. G1-G3, 2001.
11. M. Hiramatsu, K. Imaeda, N. Horio, and M. Nawata, "Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation," J. Vac. Sci. Technol. A, vol. 16, no. 2, pp. 669-673, 1998.
12. J. M. Lee, K. K. Kim, S. J. Park, and W. K Park, "Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO," Appl. Phys. Lett., vol. 78, no. 24, pp. 3842-3844, 2001.
13. D. K. Lee, S. J. Lee, J. Bang, and H. Yang, "Wet chemical etching of transparent conducting Ga-doped ZnO thin films by oxalic and formic acid," J. Electrochem. Soc., vol. 156, no. 7, pp. D211-D214, 2009.
14. Q. Guo, N. Uesugi, T. Tanaka, M. Nishio, and H. Ogawa, "Reactive ion etching of zinc oxide using methane and hydrogen," Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8597-8599, 2006. (Pubitemid 47253108)
15. S. C. Chang, D. B. Hicks, and R. C. O. Laugal, "Patterning of zinc oxide thin films," in Proc. IEEE Solid-State Sensors Actuators Workshop, 5th Tech. Dig., Jun. 1992, pp. 41-45.
16. A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, "Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device," Appl. Phys. Lett., vol. 83, no. 9, pp. 1881-1883, 2003.
17. A. D.Wieck and K. Ploog, "In-plane-gated quantum wire transistor fabricated with directly written focused ion beams," Appl. Phys. Lett., vol. 56, no. 10, pp. 928-930, 1990.
18. H. Hiroshima, "Nanoimprint with thin and uniform residual layer for various pattern densities," Microelectron. Eng., vol. 86, no. 4-6, pp. 611-614, 2009.
19. S. J. Pearton and D. P. Norton, "Dry etching of electronic oxides, polymers, and semiconductors," Plasma Process. Polymers, vol. 2, no. 1, pp. 16-37, 2004. (Pubitemid 41064442)
20. K. Y. Xu, X. F. Lu, and G. WangA. M. Song, "Strong spatial dependence of electron velocity, density, and intervalley scattering in an asymmetric nanodevice in the nonlinear transport regime," IEEE Trans. Nanotechnol., vol. 7, no. 4, pp. 451-457, Jul. 2008.
21. J. L. Lyons, A. Janotti, and C. G. Van de Walle, "Why nitrogen cannot lead to p-type conductivity in ZnO," Appl. Phys. Lett., vol. 95, no. 25, pp. 252105-252107, 2009.