Reactive ion etching of zinc oxide using methane and hydrogen

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8597-8599

  Guo, Qixin ^a   Uesugi, Nozomu ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

CH4 and H2 gases; Etching rate; Reactive ion etching; Zinc oxide

Indexed keywords

HYDROGEN; METHANE; ORGANOMETALLICS; REACTIVE ION ETCHING; SPUTTER DEPOSITION;

BOND-BREAKING EFFICIENCY; GAS COMPOSITION; GAS PRESSURE; RADIO FREQUENCY (RF) PLASMA POWER;

ZINC OXIDE;

EID: 34547875433     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8597     Document Type: Article

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