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Volumn 115, Issue 20, 2011, Pages 9838-9843

First-principles study of 2.2 nm silicon nanocrystals doped with boron

Author keywords

[No Author keywords available]

Indexed keywords

B-DOPED SI; B-DOPING; BAND EDGE; DEEP ENERGY LEVELS; DOPED SILICON; ELECTRONIC TRANSITION; FIRST-PRINCIPLES STUDY; INFRARED RANGE; SILICON NANOCRYSTALS; SURFACE RESTRUCTURING;

EID: 79959962457     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp111548b     Document Type: Article
Times cited : (65)

References (44)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.