Vacancies and B doping in Si nanocrystals

Solid State Communications

Volumn 150, Issue 1-2, 2010, Pages 130-132

  Eom, Jae Hyeon ^a   Chan, Tzu Liang ^a   Chelikowsky, James R ^a,b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

A. Nanostructures; A. Semiconductors; C. Point defects

Indexed keywords

A. NANOSTRUCTURES; A. SEMICONDUCTORS; B ATOMS; B-DOPING; C. POINT DEFECTS; INDUCED STRESS; NANOCRYSTAL SURFACE; PSEUDOPOTENTIALS; REAL-SPACE; SI NANOCRYSTAL;

DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; VACANCIES;

NANOCRYSTALS;

EID: 70449094760     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.09.033     Document Type: Article

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