Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers

Optics Express

Volumn 18, Issue 2, 2010, Pages 1144-1150

  Huang, R ^a,b   Wang, D Q ^a   Ding, H L ^b   Wang, X ^a   Chen, K J ^a   Xu, J ^a   Guo, Y Q ^b   Song, J ^b   Ma, Z Y ^a  

^a NANJING UNIVERSITY   (China)

^b HANSHAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; MULTILAYERS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; OPTICAL MULTILAYERS; PLASMA DEPOSITION; SILICON NITRIDE;

AMORPHOUS SI; CROSS-SECTIONAL TEM; ELECTRICAL EXCITATION; ELECTRON HOLE PAIRS; ENHANCED ELECTROLUMINESCENCES; EXTERNAL QUANTUM EFFICIENCY; GRAIN DENSITY; GRAIN SIZE; GREEN LIGHT EMISSION; LASER CRYSTALLIZATION; LASER FLUENCES; LASER IRRADIATIONS; MULTILAYER STRUCTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; SI NANOCRYSTAL; SUB-LAYERS; TURN ON VOLTAGE; ULTRA-THIN;

AMORPHOUS SILICON;

SILICON DERIVATIVE; SILICON NITRIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; LASER; LUMINESCENCE; METHODOLOGY; RADIATION EXPOSURE; SEMICONDUCTOR;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; LIGHTING; LUMINESCENT MEASUREMENTS; MEMBRANES, ARTIFICIAL; SEMICONDUCTORS; SILICON COMPOUNDS;

EID: 75249092277     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.001144     Document Type: Article

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