Radiative transitions in P- and B-doped silicon nanocrystals

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  De Oliveira, E L ^a   Albuquerque, E L ^a,b   De Sousa, J S ^c   Farias, G A ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^b ETH ZURICH   (Switzerland)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; SEMICONDUCTOR QUANTUM DOTS;

B-DOPED SI; DOPED NANOCRYSTALS; DOPED SILICONS; EMISSION INTENSITIES; FIRST-PRINCIPLE CALCULATIONS; IMPURITY BANDS; OSCILLATOR STRENGTHS; RADIATIVE LIFETIMES; RADIATIVE TRANSITIONS; THREE-LEVEL MODELS;

NANOCRYSTALS;

EID: 62549086118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081629     Document Type: Article

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