Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 10, 2004, Pages

  Shim, Sun Il ^a,b   Kwon, Young Suk ^a   Kim, Seong Il ^a   Kim, Yong Tae ^a   Park, Jung Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; FERROELECTRICITY; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PHOTORESISTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTERING;

FERROELECTRIC GATES; FERROELECTRIC MEMORY; HELIUM COOLING SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 4444333435     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200409051     Document Type: Conference Paper

References (4)

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2. S. K. Lee, Y. T. Kim, and S. I. Kim, J. Appl. Phys. 91, 9303 (2002).
3. Y.-J. Lee, C.-H. Jeong, J.-W. Bae, I.-K. You, J.-W. Park, and G.-Y. Yeom, Thin Solid Films 398-399, 652 (2001).
4. M. A. Lieberman and A. J. Lichtenberg, Principles of plasma discharges and materials processing (John Wiley & Sons, New York, 1994), p. 472.