Scanning tunneling microscopy observation of initial growth of Sn and Ge 1-x Sn x layers on Ge(0 0 1) substrates

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6048-6051

  Yamazaki, Masahiro ^a   Takeuchi, Shotaro ^a   Nakatsuka, Osamu ^a   Sakai, Akira ^b   Ogawa, Masaki ^a   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Germanium; Scanning tunneling microscopy; Strain; Tin

Indexed keywords

GERMANIUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR ALLOYS; STRAIN; SURFACE RECONSTRUCTION;

CHARACTERISTIC SURFACES; GE(0 0 1); POLYNUCLEAR GROWTH; STEP EDGE; SURFACE LAYERS;

TIN;

EID: 45049083518     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.175     Document Type: Article

References (7)

1. Takeuchi S., Sakai A., Yamamoto K., Nakatsuka O., Ogawa M., and Zaima S. Semicond. Sci. Technol. 22 (2007) S231-S235
2. S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Thin Solid Films, in press.
3. Tomatsu K., Nakatsuji K., Iimori T., and Komori F. Surf. Sci. 601 (2007) 1736-1746
4. Tomatsu K., Nakatsuji K., Iimori T., Takagi Y., Kusuhara H., Ishii A., and Komori F. Science 315 (2007) 1696-1698
5. Sakai A., Torige Y., Okada M., Ikeda H., Yasuda Y., and Zaima S. Appl. Phys. Lett. 79 (2001) 3242-3244
6. Torige Y., Okada M., Ikeda H., Sakai A., Zaima S., and Yasuda Y. Program and Abstracts of First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices VI-17. Sendai, Japan, January 21-23 (2001)
7. Payne M.C., Roberts N., Needs R.J., Needels M., and Joannopoulos J.D. Surf. Sci. 211-212 (1989) 1-20