Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 411-422

  Bellenger, F ^a,b   Merckling, C ^a   Penaud, J ^c   Houssa, M ^a,b   Caymax, M ^a   Meuris, M ^a   Meyer, K De ^a,b   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Rue Casimir Perier 31   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM METALLOGRAPHY; HIGH-K DIELECTRIC; INTERFACE STATES; LOGIC GATES; MOLECULAR BEAMS;

CAPPING LAYER; DENSITY OF INTERFACE STATE; ELECTRICAL MEASUREMENT; HIGH TEMPERATURE TREATMENTS; INTERFACE PROPERTY; INTERFACIAL DEGRADATION; INTERFACIAL LAYER; MOLECULAR BEAM DEPOSITION;

POTASSIUM COMPOUNDS;

EID: 63149191329     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981622     Document Type: Conference Paper

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