An atomic seesaw switch formed by tilted asymmetric Sn-Ge dimers on a Ge (001) surface

Science

Volumn 315, Issue 5819, 2007, Pages 1696-1698

  Tomatsu, K ^a   Nakatsuji, K ^a   Iimori, T ^a   Takagi, Y ^b   Kusuhara, H ^c   Ishii, A ^c   Komori, F ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN HARIMA INSTITUTE   (Japan)

^c TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; GERMANIUM; TIN;

ELECTRICAL CONDUCTIVITY; GERMANIUM; SCANNING TUNNELLING MICROSCOPY; STANDING WAVE; TIN;

ARTICLE; ATOM; DENSITY; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ELECTRONICS; ENERGY; IMAGE ANALYSIS; PRIORITY JOURNAL; PROBABILITY; REACTION ANALYSIS; REGIONAL ANESTHESIA; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY;

EID: 34047117725     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1137848     Document Type: Article

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15. 2). Under these conditions, a few X dimers are formed per 20-by-20-nm area.
16. K. Tomatsu, K. Nakatsuji, T. Iimori, F. Komori, Surf. Sci., in press; preprint available at http://arxiv.org/abs/cond-mat/0701517.
17. STM images of the X dimer at RT, details of our calculation setup, and movie 51 demonstrating conductance switching with the buckled Sn-Ge dimer are available as supporting material on Science Online.
18. -9 Pa). Sn was deposited onto a clean substrate at RT. The average Sn coverage was less than 0.05 ML.
19. The dlldV images were acquired by the lock-in technique with the tip feedback turned on. The bias voltage was modulated by 80 mV (peak to peak) at 3.0 kHz.
20. We thank M. Yamada and Y. Binghai for fruitful discussion. This work was carried out by joint research at the Institute for Solid State Physics at the University of Tokyo.