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Electrochemical and Solid-State Letters

Volumn 14, Issue 7, 2011, Pages

Investigation of GeTe/Ge2Sb2Te5 nanocomposite multilayer films for phase-change memory applications

(6) Wang, Changzhou a Zhai, Jiwei a Song, Sannian b Song, Zhitang b Sun, Mingcheng a Shen, Bo a

a TONGJI UNIVERSITY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION TEMPERATURE; MEMORY APPLICATIONS; MEMORY CELL; MEMORY DEVICE; PHASE CHANGES; PROGRAMMING VOLTAGE; RESET VOLTAGE; RESISTANCE RATIO; THICKNESS RATIO;

GERMANIUM; MULTILAYERS; NANOCOMPOSITE FILMS; NANOCOMPOSITES; PHASE CHANGE MEMORY;

MULTILAYER FILMS;

EID: 79959569636 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3578386 Document Type: Article

Times cited : (10)

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