Materials for magnetoresistive random access memory

Annual Review of Materials Research

Volumn 39, Issue , 2009, Pages 277-296

  Slaughter, J M ^a  

^a Everspin Technologies Inc   (United States)

Author keywords

Magnetic tunnel junction; Magnetoelectronics; Nonvolatile memory; Spin torque transfer; Spintronics; Tunneling magnetoresistance

Indexed keywords

MAGNETIC TUNNEL JUNCTION; NONVOLATILE MEMORY; SPIN-TORQUE TRANSFER; SPINTRONICS; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; INNOVATION; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETISM; MAGNETOELECTRONICS; MAGNETORESISTANCE; MATERIALS PROPERTIES; NANOTECHNOLOGY; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TECHNOLOGY; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION); TUNNELS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

MAGNETIC STORAGE;

EID: 67650989175     PISSN: 15317331     EISSN: None     Source Type: Book Series    
DOI: 10.1146/annurev-matsci-082908-145355     Document Type: Review

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