-
1
-
-
0005158609
-
-
JAPIAU 0021-8979 10.1063/1.348620.
-
N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.348620, 69, 2849 (1991).
-
(1991)
J. Appl. Phys.
, vol.69
, pp. 2849
-
-
Yamada, N.1
Ohno, E.2
Nishiuchi, K.3
Akahira, N.4
Takao, M.5
-
2
-
-
33748476510
-
-
APPLAB 0003-6951 10.1063/1.2335363.
-
S. Y. Lee, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee, Y. S. Park, S. H. Kim, S. H. Lee, and B. G. Yu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2335363, 89, 053517 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 053517
-
-
Lee, S.Y.1
Choi, K.J.2
Ryu, S.O.3
Yoon, S.M.4
Lee, N.Y.5
Park, Y.S.6
Kim, S.H.7
Lee, S.H.8
Yu, B.G.9
-
3
-
-
38049030099
-
-
APPLAB 0003-6951 10.1063/1.2830002.
-
C. Kim, D. S. Suh, K. H. P. Kim, Y. S. Kang, T. Y. Lee, Y. Khang, and D. G. Cahill, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2830002, 92, 013109 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 013109
-
-
Kim, C.1
Suh, D.S.2
Kim, K.H.P.3
Kang, Y.S.4
Lee, T.Y.5
Khang, Y.6
Cahill, D.G.7
-
4
-
-
38049013435
-
-
TDIMD5 0163-1918.
-
Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2006, 769.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2006
, pp. 769
-
-
Matsui, Y.1
Kurotsuchi, K.2
Tonomura, O.3
Morikawa, T.4
Kinoshita, M.5
Fujisaki, Y.6
Matsuzaki, N.7
Hanzawa, S.8
Terao, M.9
Takaura, N.10
-
5
-
-
34548026070
-
-
APPLAB 0003-6951 10.1063/1.2771053.
-
F. Rao, Z. T. Song, L. C. Wu, M. Zhong, S. L. Feng, and B. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2771053, 91, 073505 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 073505
-
-
Rao, F.1
Song, Z.T.2
Wu, L.C.3
Zhong, M.4
Feng, S.L.5
Chen, B.6
-
6
-
-
0141745746
-
-
JAPIAU 0021-8979 10.1063/1.1598272.
-
D. H. Kang, D. H. Ahn, K. B. Kim, J. F. Webb, and K. W. Yi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1598272, 94, 3536 (2003).
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 3536
-
-
Kang, D.H.1
Ahn, D.H.2
Kim, K.B.3
Webb, J.F.4
Yi, K.W.5
-
7
-
-
0031139780
-
-
THSFAP 0040-6090 10.1016/S0040-6090(96)09499-0.
-
J. R. A. Carlsson, J. E. Sundgren, L. D. Madsen, X. H. Li, and H. T. G. Hentzell, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(96)09499-0, 300, 51 (1997).
-
(1997)
Thin Solid Films
, vol.300
, pp. 51
-
-
Carlsson, J.R.A.1
Sundgren, J.E.2
Madsen, L.D.3
Li, X.H.4
Hentzell, H.T.G.5
-
8
-
-
0000290832
-
-
JAPIAU 0021-8979 10.1063/1.1713251.
-
G. A. Slack, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1713251, 35, 3460 (1964).
-
(1964)
J. Appl. Phys.
, vol.35
, pp. 3460
-
-
Slack, G.A.1
-
9
-
-
34247129555
-
-
ASUSEE 0169-4332 10.1016/j.apsusc.2007.01.014.
-
J. L. Yu, B. Liu, T. Zhang, Z. T. Song, S. L. Feng, and B. Chen, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/j.apsusc.2007.01.014, 253, 6125 (2007).
-
(2007)
Appl. Surf. Sci.
, vol.253
, pp. 6125
-
-
Yu, J.L.1
Liu, B.2
Zhang, T.3
Song, Z.T.4
Feng, S.L.5
Chen, B.6
-
10
-
-
27144530666
-
-
SSTEET 0268-1242 10.1088/0268-1242/20/11/002.
-
H. Y. Cheng, C. A. Jong, R. J. Chung, T. S. Chin, and R. T. Huang, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/20/11/002, 20, 1111 (2005).
-
(2005)
Semicond. Sci. Technol.
, vol.20
, pp. 1111
-
-
Cheng, H.Y.1
Jong, C.A.2
Chung, R.J.3
Chin, T.S.4
Huang, R.T.5
-
11
-
-
34147138226
-
-
APPLAB 0003-6951 10.1063/1.2719148.
-
L. Krusin-Elbaum, C. Cabral, K. N. Chen, M. Copel, D. W. Abraham, K. B. Reuter, S. M. Rossnagel, J. Bruley, and V. R. Deline, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2719148, 90, 141902 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 141902
-
-
Krusin-Elbaum, L.1
Cabral, C.2
Chen, K.N.3
Copel, M.4
Abraham, D.W.5
Reuter, K.B.6
Rossnagel, S.M.7
Bruley, J.8
Deline, V.R.9
-
12
-
-
33847216591
-
-
APAMFC 0947-8396 10.1007/s00339-006-3851-2.
-
J. Feng, Y. Zhang, B. W. Qiao, Y. F. Lai, Y. Y. Lin, B. C. Cai, T. A. Tang, and B. Chen, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-006-3851-2, 87, 57 (2007).
-
(2007)
Appl. Phys. A: Mater. Sci. Process.
, vol.87
, pp. 57
-
-
Feng, J.1
Zhang, Y.2
Qiao, B.W.3
Lai, Y.F.4
Lin, Y.Y.5
Cai, B.C.6
Tang, T.A.7
Chen, B.8
-
13
-
-
42349116665
-
-
in European Phase Change and Ovonics Symposium.
-
B. K. Cheong, J. H. Jeong, S. Lee, I. H. Kim, W. Zhe, H. W. Ahn, S. C. Kim, H. S. Lee, and Y. W. Park, " Characteristics of Phase Change Memory Devices Based on Ge-doped SbTe and its Derivative.," in European Phase Change and Ovonics Symposium 2007.
-
(2007)
Characteristics of Phase Change Memory Devices Based on Ge-doped SbTe and Its Derivative
-
-
Cheong, B.K.1
Jeong, J.H.2
Lee, S.3
Kim, I.H.4
Zhe, W.5
Ahn, H.W.6
Kim, S.C.7
Lee, H.S.8
Park, Y.W.9
-
14
-
-
42349090606
-
-
PSSBBD 0370-1972 10.1002/pssb.2221580213.
-
F. Völklein and E. Kessler, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.2221580213, 158, 521 (1990).
-
(1990)
Phys. Status Solidi B
, vol.158
, pp. 521
-
-
Völklein, F.1
Kessler, E.2
-
15
-
-
33748476510
-
-
APPLAB 0003-6951 10.1063/1.2335363.
-
S. Y. Lee, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee, Y. S. Park, S. H. Kim, S. H. Lee, and B. G. Yu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2335363, 89, 053517 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 053517
-
-
Lee, S.Y.1
Choi, K.J.2
Ryu, S.O.3
Yoon, S.M.4
Lee, N.Y.5
Park, Y.S.6
Kim, S.H.7
Lee, S.H.8
Yu, B.G.9
-
16
-
-
36449004963
-
-
APPLAB 0003-6951 10.1063/1.112933.
-
O. W. Käding, H. Skurk, and K. E. Goodson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.112933, 65, 1629 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 1629
-
-
Käding, O.W.1
Skurk, H.2
Goodson, K.E.3
|