Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2148-2150

  Kanno, Hiroshi ^a   Tsunoda, Isao ^a   Kenjo, Atsushi ^a   Sadoh, Taizoh ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; GERMANIUM; INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; SILICA;

OPTICAL MICROGRAPHS;

CRYSTALLIZATION;

EID: 0037474959     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564298     Document Type: Article

References (12)

1. S. Yamaguchi, N. Sugii, S. K. Park, K. Nakagawa, and M. Miyao, J. Appl. Phys. 89, 2091 (2001).
2. J. Olivares, A. Rodriguez, J. Sangrador, T. Rodriguez, C. Ballesteros, and A. Kling, Thin Solid Films 337, 51 (1999).
3. M. Miyao, T. Sadoh, S. Yamaguchi, and S. K. Park, Tech. Rep. IEICE 101, 1 (2001).
4. J. H. Kim and J. Y. Lee, Jpn. J. Appl. Phys., Part 1 35, 2052 (1996).
5. S. W. Lee, Y. C. Jeon, and S. K. Joo, Appl. Phys. Lett. 66, 1671 (1995).
6. B. Bian, J. Yie, B. Li, and Z. Wu, J. Appl. Phys. 73, 7402 (1993).
7. C. Hayzelden and J. L. Batstone, J. Appl. Phys. 73, 8279 (1993).
8. M. Miyasaka, K. Makihira, T. Asano, E. Polychroniadis, and J. Stoemenos, Appl. Phys. Lett. 80, 944 (2002).
9. S. W. Lee and S. K. Joo, IEEE Electron Device Lett. 17, 160 (1996).
10. Z. Jin, O. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, J. Appl. Phys. 84, 194 (1998).
11. M. Miyao, M. Moniwa, K. Kusukawa, and W. Sinke, J. Appl. Phys. 64, 3018 (1988).
12. M. I. Alonso and K. Winer, Phys. Rev. B 39, 10056 (1989).