Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 346-350

  Maeda, Tatsuro ^a   Ikeda, Keiji ^a   Nakaharai, Shu ^b   Tezuka, Tsutomu ^b   Sugiyama, Naoharu ^b   Moriyama, Yoshihiko ^b   Takagi, Shinichi ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ge; MOSFET; Schottky barrier; Thin body Ge on insulator

Indexed keywords

CARRIER CONCENTRATION; CONDENSATION; ELECTRODES; GERMANIUM; SEMICONDUCTOR DOPING;

MOSFET; SCHOTTKY BARRIER; THIN-BODY GE-ON-INSULATOR;

MOSFET DEVICES;

EID: 33646108598     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.339     Document Type: Article

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