Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 2, 2008, Pages 1876-1879

  Sadoh, Taizoh ^a   Toko, Kaoru ^a   Kanno, Hiroshi ^a   Masumori, Shunji ^a   Itakura, Masaru ^a   Kuwano, Noriyuki ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Metal induced lateral crystallization; Poly siGe; Solid phase crystallization; TFT

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; GERMANIUM; METAL ANALYSIS; MICROSCOPIC EXAMINATION; NANOCRYSTALLINE ALLOYS; NUCLEATION; POLYSILICON; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

AMORPHOUS; AMORPHOUS SIS; ANNEALING TEMPERATURES; GE FRACTIONS; HIGH TEMPERATURES; LATERAL CRYSTALLIZATIONS; POLY-SIGE; POLYCRYSTALLINE SILICONS; SIGE FILMS; SPONTANEOUS NUCLEATIONS; TFT;

AMORPHOUS SILICON;

EID: 54249119978     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1876     Document Type: Article

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