A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

Applied Physics B: Lasers and Optics

Volumn 97, Issue 2, 2009, Pages 465-468

  Ding, K ^a,b   Zeng, Y P ^a,b   Wei, X C ^b   Li, Z C ^a   Wang, J X ^a   Lu, H X ^a   Cong, P P ^a   Yi, X Y ^a   Wang, G H ^a   Li, J M ^a,b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; ELECTROLUMINESCENCE EFFICIENCIES; HIGH EXCITATION LEVELS; INGAN/GAN; LOW TEMPERATURES; ROOM TEMPERATURE; WELL DESIGN;

CURRENT DENSITY; LIGHT; LIGHT EMITTING DIODES;

LIGHT EMISSION;

EID: 70350393575     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-009-3657-y     Document Type: Article

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