SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics Letters

Volumn 95, Issue 15, 2009, Pages

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

(7) Charash, R a Maaskant, P P a Lewis, L a McAleese, C b Kappers, M J b Humphreys, C J b Corbett, B a

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; CARRIER FLOW; INDIUM CONTENT; INGAN/GAN; MULTIPLE QUANTUM WELLS; QUANTUM WELL; TRIPLE-QUANTUM WELLS;

ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70350077549 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3244203 Document Type: Article

Times cited : (52)

References (12)

1
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

2
- 37149027248
- Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
- DOI 10.1063/1.2807272
- N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 243506
- Gardner, N.F.¹ Muller, G.O.² Shen, Y.C.³ Chen, G.⁴ Watanabe, S.⁵ Gotz, W.⁶ Krames, M.R.⁷

3
- 67649272897
- 1610-1634,. 10.1002/pssc.200778554
- M. Peter, A. Laubsch, P. Stauss, A. Walter, J. Baur, and B. Hahn, Phys. Status Solidi C 1610-1634 5, 2050 (2008). 10.1002/pssc.200778554
- (2008) Phys. Status Solidi C , vol.5 , pp. 2050
- Peter, M.¹ Laubsch, A.² Stauss, P.³ Walter, A.⁴ Baur, J.⁵ Hahn, B.⁶

4
- 0041422330
- 0021-8979,. 10.1063/1.1591051
- Y. L. Li, Th. Gessmann, and E. F. Schubert, J. Appl. Phys. 0021-8979 94, 2167 (2003). 10.1063/1.1591051
- (2003) J. Appl. Phys. , vol.94 , pp. 2167
- Li, Y.L.¹ Gessmann, Th.² Schubert, E.F.³

5
- 47549085538
- 0003-6951,. 10.1063/1.2957667
- J. P. Liu, J. -H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 0003-6951 93, 021102 (2008). 10.1063/1.2957667
- (2008) Appl. Phys. Lett. , vol.93 , pp. 021102
- Liu, J.P.¹ Ryou, J.-H.² Dupuis, R.D.³ Han, J.⁴ Shen, G.D.⁵ Wang, H.B.⁶

6
- 49749131935
- 1610-1634,. 10.1002/pssc.200674825
- S. W. Feng, C. C. Pan, J. I. Chyi, C. N. Kuo, and K. H. Chen, Phys. Status Solidi C 1610-1634 4, 2716 (2007). 10.1002/pssc.200674825
- (2007) Phys. Status Solidi C , vol.4 , pp. 2716
- Feng, S.W.¹ Pan, C.C.² Chyi, J.I.³ Kuo, C.N.⁴ Chen, K.H.⁵

7
- 17944368952
- Comparison of blue and green InGaNGaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
- DOI 10.1063/1.1866634, 101903
- Y. D. Qi, H. Liang, D. Wang, Z. D. Lu, W. Tang, and K. M. Lau, Appl. Phys. Lett. 0003-6951 86, 101903 (2005). 10.1063/1.1866634 (Pubitemid 40597089)
- (2005) Applied Physics Letters , vol.86 , Issue.10 , pp. 1-3
- Qi, Y.D.¹ Liang, H.² Wang, D.³ Lu, Z.D.⁴ Tang, W.⁵ Lau, K.M.⁶

8
- 38949146387
- Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes
- DOI 10.1063/1.2839305
- A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 0003-6951 92, 053502 (2008). 10.1063/1.2839305 (Pubitemid 351230052)
- (2008) Applied Physics Letters , vol.92 , Issue.5 , pp. 053502
- David, A.¹ Grundmann, M.J.² Kaeding, J.F.³ Gardner, N.F.⁴ Mihopoulos, T.G.⁵ Krames, M.R.⁶

9
- 0034135675
- Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
- DOI 10.1109/68.823494
- M. J. Hamp, D. T. Cassidy, B. J. Robinson, Q. C. Zhao, and D. A. Thompson, IEEE Photonics Technol. Lett. 1041-1135 12, 134 (2000). 10.1109/68.823494 (Pubitemid 32132969)
- (2000) IEEE Photonics Technology Letters , vol.12 , Issue.2 , pp. 134-136
- Hamp, M.J.¹ Cassidy, D.T.² Robinson, B.J.³ Zhao, Q.C.⁴ Thompson, D.A.⁵

10
- 0035971712
- 0003-6951,. 10.1063/1.1368374
- T. Wang, J. Bai, and S. Sakai, Appl. Phys. Lett. 0003-6951 78, 2617 (2001). 10.1063/1.1368374
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2617
- Wang, T.¹ Bai, J.² Sakai, S.³

11
- 34248676286
- Measurement of the internal quantum efficiency of InGaN quantum wells
- DOI 10.1117/12.700829, Light-Emitting Diodes: Research, Manufacturing, and Applications XI
- A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. T. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, and B. Hahn, Proc. SPIE 0277-786X 6486, 64860J (2007). 10.1117/12.700829 (Pubitemid 46775503)
- (2007) Proceedings of SPIE - The International Society for Optical Engineering , vol.6486
- Laubsch, A.¹ Sabathil, M.² Bruederl, G.³ Wagner, J.⁴ Strassburg, M.⁵ Baur, E.⁶ Braun, H.⁷ Schwarz, U.T.⁸ Lell, A.⁹ Lutgen, S.¹⁰ Linder, N.¹¹ Oberschmid, R.¹² Hahn, B.¹³

12
- 70350046069
- BANDENG.
- M. Grundmann, BANDENG, 2005, http://my.ece.ucsb.edu/mgrundmann/bandeng. htm.
- (2005)
- Grundmann, M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.