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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

Cathodoluminescence study of GaN-based film structures

(10) Jiang, D S a Jahn, U b Chen, J a Li, D Y a Zhang, S M a Zhu, J J a Zhao, D G a Liu, Z S a Yang, H a Ploog, K b

a INSTITUTE OF SEMICONDUCTORS (China)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

Cathodoluminescence (CL); Dislocation; GaN based laser diodes; Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

CATHODOLUMINESCENCE (CL); DISLOCATION; GAN-BASED LASER DIODES; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

CATHODOLUMINESCENCE; CORUNDUM; CRYSTALLOGRAPHY; DIODES; EPITAXIAL FILMS; EPITAXIAL LAYERS; GALLIUM NITRIDE; LASERS; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; POINT DEFECTS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS;

GALLIUM ALLOYS;

EID: 53649108414 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9559-z Document Type: Article

Times cited : (9)

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