Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

Nanotechnology

Volumn 20, Issue 45, 2009, Pages

  Lee, Myeongwon ^a   Koo, Jamin ^a   Chung, Eun Ae ^a   Jeong, Dong Young ^a   Koo, Yong Seo ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Seokyeong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR CONDUCTION; BAND TO BAND TUNNELING; CHANNEL REGION; CHANNEL SWITCHING; CMOS-COMPATIBLE TECHNOLOGY; FLEXIBLE PLASTIC SUBSTRATES; GENERATION RATE; HEAVILY DOPED; N-CHANNEL; OPERATING MODES; PLASTIC SUBSTRATES; SI WAFER; SILICON NANOWIRES; SUBTHRESHOLD SWING; TOPDOWN; TUNNELING FIELD-EFFECT TRANSISTORS; WORKING PRINCIPLES;

GATES (TRANSISTOR); NANOWIRES; PLASTICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

NANOWIRE; SILICON;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; PRIORITY JOURNAL; SEMICONDUCTOR; SYNTHESIS; TEMPERATURE MEASUREMENT;

EID: 70350639329     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/45/455201     Document Type: Article

References (26)

1. Xu J M 2000 Synth. Met. 115 1
2. Gonzalez R, Gordon B M and Horowitz M A 1997 IEEE J. Solid-State Circuits 32 1210
3. Thompson S, Packan P and Borh M 1998 Intel Technol. J. Q3'98 2 1
4. Taur Y and Ning T H 1998 Fundamentals of Modern VLSI Devices (Cambridge: Cambridge University Press) p171
5. Reddick W M and Amaratunga G A J 1995 Appl. Phys. Lett. 67 494
6. Wang P-F, Nirschl Th, Schmitt-Landsiedel D and Hansch W 2003 Solid-State Electron. 47 1187
7. Wang P-F, Hilsenbeck K, Nirschl Th, Oswald M, Stepper Ch, Weis M, Schmitt-Landsiedel D and Hansch W 2004 Solid-State Electron. 48 2281
8. Aydin C, Zaslavsky A, Luryi S, Cristoloveanu S, Mariolle D, Fraboulet D and Deleonibus S 2004 Appl. Phys. Lett. 84 1780
9. Bhuwalka K K, Schulze J and Eisele I 2005 IEEE Trans. Electron Devices 52 1541
10. Koswatta S O, Nikonov D E and Lundstrom M S 2005 IEEE IEDM Tech. Dig. 518
11. Bhuwalka K K, Born M, Schindler M, Schmidt M, Sulima T and Eisele I 2006 Japan. J. Appl. Phys. 45 3106
12. Zhang Q, Zhao W and Seabaugh A 2006 IEEE Electron Device Lett. 27 297
13. Choi W Y, Park B-G, Lee J D and Liu T-J K 2007 IEEE Electron Device Lett. 28 743
14. Boucart K and Ionescu A M 2007 IEEE Trans. Electron Devices 54 1725
15. Knoch J, Mantl S and Appenzeller J 2007 Solid-State Electron. 51 572
16. Björk M T, Knoch J, Schmid H, Riel H and Riess W 2008 Appl. Phys. Lett. 92 193504
17. Nagavarapu V, Jhaveri R and Woo J C S 2008 IEEE Trans. Electron Devices 55 1013
18. Hu C, Chou D, Patel P and Bowonder A 2008 IEEE VLSI-TSA 14
19. Frank D J 2002 IBM J. Res. Dev. 46 235
20. Lieber C M 2001 Sci. Am. 285 58
21. McAlpine M C, Friedman R S and Lieber C M 2005 Proc. IEEE 93 1357
22. Lee K-N, Jung S-W, Kim W-H, Lee M-H, Shin K-S and Seong W-K 2007 Nanotechnology 18 445302
23. McAlpine M C, Ahmad H, Wang D and Heath J R 2007 Nat. Mater. 6 379
24. Seidel H, Csepregi L, Heuberger A and Baumgartel H 1990 J. Electrochem. Soc. 137 3626
25. Baca A J, Ahn J-H, Sun Y, Meitl M A, Menard E, Kim H-S, Choi W M, Kim D-H, Huang Y and Rogers J A 2008 Angew. Chem. Int. Edn 47 5524
26. Kane E O 1959 J. Phys. Chem. Solids 12 181