Charge transport modulation of silicon nanowire by O2 plasma

Solid State Sciences

Volumn 11, Issue 11, 2009, Pages 1870-1874

  Koo, Jamin ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Electronic transport; Nanowire; Semiconductors; Silicon

Indexed keywords

BACK-GATE; BULK WAFERS; CHARGE TRANSPORT; DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; ELECTRONIC TRANSPORT; OXYGEN IONS; OXYGEN PLASMA TREATMENTS; P-TYPE; P-TYPE SILICON; SEMICONDUCTORS; SILICON NANOWIRES;

DRAIN CURRENT; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GAS ADSORPTION; NANOWIRES; OXYGEN; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

SILICON WAFERS;

EID: 70350571909     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2009.08.004     Document Type: Article

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