Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6227-6229

  Kang, Jeongmin ^a   Keem, Kihyun ^a   Jeong, Dong Young ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

FET; Flexible; Nanowire; ZnO

Indexed keywords

DRAIN CURRENT; NANOWIRES; PLASTICS; STRAIN; TRANSCONDUCTANCE; ZINC OXIDE;

ELECTRICAL CHARACTERISTICS; FIELD EFFECT MOBILITY;

FIELD EFFECT TRANSISTORS;

EID: 34648815948     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6227     Document Type: Article

References (18)

1. Z. W. Pan, Z. R. Dai, and Z. L. Wang: Science 291 (2001) 1947.
2. M. H. Huang, S. Mao, G. Feick, H. Uan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang: Science 292 (2001) 1897.
3. Estern: Nanotechnology 16 (2005) 2941.
4. Y. Hyang, X. Duan, Q. Wei, and C. M. Lieber: Science 291 (2001) 630.
5. W. I. Park, G.-C. Yi, M. Kim, and S. J. Pennycook: Adv. Mater. 15 (2003) 526.
6. M. C. Mcalpine, R. S. Friedman, and C. M. Lieber: Proc. IEEE 93 (2005) 1357.
7. J. M. Xu: Synth. Met 115 (2000) 1.
8. Y. Hamakawa: Sens. Mater. 3 (1991) 9.
9. E. Lueder: Liquid Crystal Displays: Addressing Schemes and Electro-Optical Effects (Wiley, Chichester, U.K., 2001).
10. R. F. Service: Science 287 (2000) 415.
11. S. Uchikoga: MRS Bull. 27 (2002) 881.
12. R. L. Wisnieff and J. J. Ritsko: IBM J. Res. Dev. 44 (2000) 409.
13. J. M Shaw and P. F. Seidlen IBM J. Res. Dev. 45 (2001) 3.
14. C. Barron, J. Angelé, L. Bajic, L Dozov, F. Leblanc, and S. Perny: Proc, Asia Display/HDD 04, 16.2C.
15. K. J. Lee, J. Lee, H. Hwang, Z. J. Reitmeier, R. F. Davis, J. A. Rogers, and R. G. Nuzzo: Small 1 (2005) 1164.
16. S. Timoshenko and D. H. Young: Elements of Strength of Materials (Van Nostrand, NewYork, 1968).
17. K. Keem, D.-Y. Jeong, S. Kim, M.-S. Lee, L-S. Yeo, and J.-T. Moon: Nano Lett. 6 (2006) 1454.
18. Ü. Özgür, Y. L Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avratin, S.-J. Cho, and H. Morkoç: J. Appl. Phys. 98 (2005) 041301.