Molecular analogue memory cell based on electrical switching and memory in molecular thin films

Synthetic Metals

Volumn 122, Issue 1, 2001, Pages 199-202

  Krieger, Ju H ^a   Trubin, S V ^a   Vaschenko, S B ^a   Yudanov, N F ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; MICROPROCESSOR CHIPS; MOLECULAR STRUCTURE; SWITCHING; THIN FILM DEVICES;

MOLECULAR ANALOGUE MEMORY CELLS;

CONDUCTIVE FILMS;

EID: 0034825604     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(00)01354-0     Document Type: Article

References (7)

1. R.S. Potember, T.O. Pohler, D.O. Cowan, Appl. Phys. 34 (1979) 405.
2. C. Sato, S. Wakamatsu, K. Tadokoro, J. Appl. Phys. 68 (1990) 6535.
3. C. Hamann, A. Mrwa, Int. J. Electron. 73 (1990) 1039.
4. D. Ottenbacher, K.D. Schierbaum, W. Gopel, J. Mol. Electron. 7 (1991) 80.
5. H. Pagnia, N. Sotnik, Phys. Stat. Sol. (a) 108 (1988) 11.
6. Ju.H. Krieger, J. Struct. Chem. 40 (1999) 594.
7. Ju.H. Krieger, N.F. Yudanov, I.K. Igumenov, S.B. Vaschenko, J. Struct. Chem. 34 (1993) 966.