Voltage-induced metal-insulator transition in polythiophene field-effect transistors

Physical Review Letters

Volumn 96, Issue 24, 2006, Pages

  Dhoot, A S ^a   Wang, G M ^a   Moses, D ^a   Heeger, A J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; FERMI LEVEL; FIELD EFFECT TRANSISTORS; PHONONS; THERMAL EFFECTS;

COULOMB INTERACTION; POLYTHIOPHENE FIELD-EFFECT TRANSISTORS; VOLTAGE-INDUCED METAL-INSULATOR TRANSITION;

METAL INSULATOR TRANSITION;

EID: 33745230144     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.246403     Document Type: Article

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