Investigation of mask defectivity in full field EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Jonckheere, Rik ^a   Iwamoto, Fumio ^a,b   Lorusso, G F ^a   Goethals, A M ^a   Ronse, K ^a   Koop, H ^c   Schmoeller, T ^c  

^a IMEC   (Belgium)

^b PANASONIC CORPORATION   (Japan)

^c Synopsys GmbH   (Germany)

Author keywords

Defect inspection; Defect printability; EUV lithography; EUV reticle; Full field; Particles; Reticle handling

Indexed keywords

DEFECTS; EXTREME ULTRAVIOLET LITHOGRAPHY; MULTILAYERS; PRINTED CIRCUITS; SUBSTRATES; SURFACE TREATMENT; WSI CIRCUITS;

CARBON CUBES; DEFECT PRINTABILITY; RETICLE HANDLING;

MASKS;

EID: 42149181430     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746566     Document Type: Conference Paper

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