Extraction and identification of resist modeling parameters for EUV Lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Fonseca, Carlos A ^a   Gronheid, Roel ^b   Scheer, Steven A ^a  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b IMEC   (Belgium)

Author keywords

EUV; Full resist model; Lithography simulation; Model calibration

Indexed keywords

ARF RESISTS; CALIBRATION METHODOLOGIES; DISSOLUTION BEHAVIORS; EUV; EUV LITHOGRAPHIES; EUV RESISTS; FULL RESIST MODEL; IMAGING CHARACTERISTICS; LITHOGRAPHY SIMULATION; MODEL CALIBRATION; MODEL CALIBRATIONS; MODEL PARAMETERS; MODELING PARAMETERS; OPTICAL DENSITIES; PROCESS LATITUDES; RESIST IMAGING; RESIST MODELS; SIGNIFICANT IMPACTS;

CALIBRATION; DISSOLUTION;

ULTRAVIOLET DEVICES;

EID: 57349177634     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.773122     Document Type: Conference Paper

References (5)

1. A. M. Goethals et al. "Progress in EUV Resist Performance" J. Photopol. Sci. Tech. 2006, 19, 501-506
2. R. Gronheid et al. "Characterization of Extreme Ultraviolet Resists with Interference Lithography" Microelectr. Eng. 2006, 83, 1103-1106.
3. PROLITH™ by KLA-Tencor, Inc.
4. Irie et al., "Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength", Japan Journal of Applied Physics, Vol. 41 (Sept. 2002)
5. http://henke.lbl.gov/optical-constants/