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Volumn 98, Issue 23, 2011, Pages

Enhanced magnetoresistance in naturally oxidized MgO-based magnetic tunnel junctions with ferromagnetic CoFe/CoFeB bilayers

(6) Schreiber, D K a,b Choi, Y S c Liu, Yuzi b Chiaramonti, Ann N b Seidman, David N a,d Petford Long, A K a,b

a Northwestern University (United States)

b ARGONNE NATIONAL LABORATORY (United States)

c Canon ANELVA Corporation ^* (Japan)

d NORTHWESTERN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; BI-LAYER; COMPOSITIONAL UNIFORMITY; ELEMENTAL DISTRIBUTION; FREE LAYERS; LAYER INTERFACES; MAGNETIC TUNNEL JUNCTION; REFERENCE LAYER; RESISTANCE-AREA PRODUCTS; TUNNEL BARRIER;

COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETOELECTRONICS; MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 79959333269 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3597224 Document Type: Article

Times cited : (13)

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