Experimental identification of unique oxide defect regions by characteristic response of charge pumping

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Masuduzzaman, Muhammad ^a   Islam, Ahmad ^a   Degraeve, Robin ^b   Cho, Moonju ^b   Zahid, Mohammed ^b   Alam, Muhammad ^a  

^a PURDUE UNIVERSITY   (United States)

^b IMEC   (Belgium)

Author keywords

Bulk trap; charge pumping; high k dielectric; trap profiling

Indexed keywords

BULK OXIDES; BULK TRAPS; CHANNEL LENGTH; CHARACTERIZATION TECHNIQUES; CHARGE PUMPING; DEEP TRAPS; DEFECT ENERGY; EXPERIMENTAL IDENTIFICATION; GATE STACKS; HIGH-K DIELECTRIC; MULTI FREQUENCY; OPTIMIZATION SCHEME; RESEARCH GROUPS; SHALLOW TRAPS; TRAP PROFILING;

EXPERIMENTS; HAFNIUM OXIDES; PUMPS;

DEFECTS;

EID: 79959318893     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784478     Document Type: Conference Paper

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